multilayer structure in seasgesi-based ots for high thermal stability and reliability enhancement
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| Date | 2022 |
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| Auteurs | Laguna,- C | Bernard,- M | Garrione,- J | Castellani,- N | Meli,- V | Martin,- S | Aussenac,- F | Rouchon,- D | Rochat,- N | Nolot,- E | Bourgeois,- G | Cyrille,- MC | Militaru,- L | Souifi,- A | Andrieu,- F | Navarro,- G | |
| Source | European Solid-State Device Research Conference |
| Résumé | In this paper, we present an innovative Multilayer SeAsGeSi-based Ovonic Threshold Switching (OTS) Selector targeting high reliability for Crossbar arrays. We compare our Multilayer (ML) OTS with SeAsGeSi-based bulk alloy (SAGS). We demonstrate the high thermal stability of the ML stack against the Back-End-of-Line (BEOL) thermal budget as well as the reduction of the device-to-device variability and reliable switching operations up to 300°C. We study by Raman and FTIR spectroscopy the integrity of the ML OTS material after an annealing of 3 hours at 400° C. SeAsGeSi Multilayer OTS delays crystallization mechanism along cycling. We finally report the successful co-integration of our ML with Phase-Change Memory technology. © 2022 IEEE. |
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